氧化鉬摻雜比例對鋅薄膜物性的影響研究和探討

MUSTIR > College of Engineering > Department of Opto-Electronic System Engineering > Research Projects in School > Item 987654321/1003

Please use this identifier to cite or link to this item: http://120.105.36.38/ir/handle/987654321/1003

Title:	氧化鉬摻雜比例對鋅薄膜物性的影響研究和探討
Authors:	顧鴻壽
Contributors:	光電工程系
Keywords:	摻雜三氧化鉬的鋅、脈衝式雷射沉積法透明導電膜載子濃度
Date:	2015-10
Issue Date:	2016-01-13 11:06:34 (UTC+8)
Abstract:	鉬摻雜至氧化鋅透明導電膜製備在不同基板溫度下，利用脈衝雷射沉積法製備，探討基板溫度對結構、電學、光學、發光特性的影響。XRD顯示，鉬摻雜氧化鋅薄膜結晶為六邊纖鋅礦結構在(002)面上有優先取向，隨著基板溫度上升，薄膜電阻率先呈現下降之後上升，在基板溫度為300°C時薄膜有最低的電阻率3.17 x 10-3 Ω cm，載子遷移率為7.50 cm2．V−1．S -1，最高的載子濃度2.62 x 1020 cm-3。所有的薄膜在可見光區都有超過82%的高透光率，光激發螢光光譜儀 (PL) 圖譜顯示出近能帶的發光。
Appears in Collections:	[Department of Opto-Electronic System Engineering] Research Projects in School

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